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this is information on a product in full production. february 2013 doc id 18062 rev 2 1/13 13 STI300N4F6 n-channel 40 v, 1.7 m typ., 160 a, stripfet? vi deepgate? power mosfet in a i2pak package datasheet ? production data features standard level v gs(th) 100% avalanche rated applications automotive switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v ds r ds(on) max i d STI300N4F6 40 v 2.2 m 160 a (1) 1. limited by wire bonding 1 2 3 i2pak am01474v1 d (tab or 2) g(1) s ( 3 ) table 1. device summary order code marking package packaging STI300N4F6 300n4f6 i2pak tube www.st.com
contents STI300N4F6 2/13 doc id 18062 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STI300N4F6 electrical ratings doc id 18062 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 20 v i d (1) 1. limited by wire bonding drain current (continuous) at t c = 25 c 160 a i d (1) drain current (continuous) at t c = 100 c 160 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 640 a p tot total dissipation at t c = 25 c 300 w i av avalanche current, repetitive or not-repetitive (pulse width limited by t j max ) 160 a e as single pulse avalanche energy (starting t j =25 c, i d =i av , v dd =35 v) 1100 mj t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.5 c/w r thj-amb thermal resistance junction-ambient max 62.5
electrical characteristics STI300N4F6 4/13 doc id 18062 rev 2 2 electrical characteristics (t j = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs =0) i d = 250 a 40 v i dss zero gate voltage drain current v ds = 40 v, v ds = 40 v, t c =125 c 1 100 a a i gss gate-source leakage current v gs = 20 v, v ds = 0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 80 a 1.7 2.2 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f = 1 mhz, v gs = 0 - 13800 1870 1095 - nf nf nf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 160 a v gs =10 v (see figure 14 ) - 240 59 75.2 - nc nc nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 20 v, i d = 80 a, r g =4.7 , v gs =10 v (see figure 13 ) - 28 98 190 95 - ns ns ns ns
STI300N4F6 electrical characteristics doc id 18062 rev 2 5/13 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - - 160 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - - 640 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd = 160 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 160 a, di/dt = 100 a/s, v dd = 32 v, t j = 25 c (see figure 15 ) - 58.7 99.2 3.38 ns nc a
electrical characteristics STI300N4F6 6/13 doc id 18062 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 1m s 100 s tj=175c tc=25c s ingle p u l s e 100 am15605v1 s ingle p u l s e 0.05 0.02 0.01 =0.5 k 10 t p ( s ) -4 10 - 3 10 -2 10 10 -1 10 -5 10 -2 -1 am15606v1 figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 150 100 50 0 0 0.4 v d s (v) (a) 0.2 200 v g s = 4 v v g s = 5 v v g s = 6 v v g s = 7, 8 , 9, 10 v 0.6 0. 8 250 3 00 3 50 am15607v1 i d 150 100 50 0 2 4 v g s (v) 6 (a) 3 5 200 250 v d s = 1 v 3 00 3 50 400 am1560 8 v1 v g s 6 4 2 0 0 50 q g (nc) (v) 8 100 150 10 v dd =20v i d =160a v d s 12 200 250 am15609v1 r d s (on) 1.2 1.0 0. 8 0.6 0 40 i d (a) (m ) 20 60 1.4 1.6 8 0 1. 8 v =10 v g s am15610v1
STI300N4F6 electrical characteristics doc id 18062 rev 2 7/13 figure 8. capacitance variations figure 9. drain-source diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized b vdss vs temperature c 6100 4100 2100 100 0 20 v d s (v) (pf) 10 3 0 ci ss co ss cr ss 40 8 100 10100 12100 14100 16100 am15611v1 v s d 0 40 i s d (a) (v) 20 60 8 0 0. 3 0. 3 5 0.4 0.45 0.5 0.55 t j =-55c t j =25c t j =175c 0.6 0.65 0.7 0.75 0. 8 am15612v1 v g s (th) 0.6 0.4 0.2 0 -75 -25 t j (c) (norm) -50 0. 8 0 1 i d =250 a 1.2 75 50 100 25 125 150 am1561 3 v1 r d s (on) 0.6 0.4 0 t j (c) (norm) 0.2 -75 0 -50 75 -25 50 100 25 125 0. 8 150 1 1.2 1.4 1.6 1. 8 v g s =10v i d = 8 0a am15614v1 v d s -75 0 t j (c) (norm) -50 75 -25 50 100 0.92 0.94 0.96 0.9 8 1 1.02 i d = 1ma 25 125 1.04 1.06 150 1.0 8 1.1 am15615v1
test circuits STI300N4F6 8/13 doc id 18062 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STI300N4F6 package mechanical data doc id 18062 rev 2 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STI300N4F6 10/13 doc id 18062 rev 2 table 8. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
STI300N4F6 package mechanical data doc id 18062 rev 2 11/13 figure 19. i2pak (to-262) drawing 00049 8 2_rev_h
revision history STI300N4F6 12/13 doc id 18062 rev 2 5 revision history table 9. document revision history date revision changes 05-oct-2010 1 first release 01-feb-2013 2 ? added: section 2.1: electrical characteristics (curves) ? minor text changes ? updated: section 4: package mechanical data
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